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Number of items: 21.


Capan, Ivana (2022) 4H-SiC Schottky barrier diodes as radiation detectors: a review. Electronics, 11 (4). ISSN 2079-9292

Čižmar, Tihana; Panžić, Ivana; Capan, Ivana; Gajović, Andreja (2021) Nanostructured TiO2 photocatalyst modified with Cu for improved imidacloprid degradation. Applied Surface Science, 569 . ISSN 0169-4332

Capan, Ivana; Brodar, Tomislav; Makino, Takahiro; Radulović, Vladimir; Snoj, Luka (2021) M-Center in Neutron-Irradiated 4H-SiC. Crystals, 11 (11). ISSN 2073-4352

Bernat, Robert; Capan, Ivana; Bakrač, Luka; Brodar, Tomislav; Makino, Takahiro; Ohshima, Takeshi; Pastuović, Željko; Sarbutt, Adam (2021) Response of 4H-SiC Detectors to Ionizing Particles. Crystals, 11 (1). ISSN 2073-4352

Panžić, Ivana; Capan, Ivana; Brodar, Tomislav; Bafti, Arijeta; Mandić, Vilko (2021) Structural and Electrical Characterization of Pure and Al-Doped ZnO Nanorods. Materials, 14 (23). ISSN 1996-1944

Bernat, Robert; Bakrač, Luka; Radulović, Vladimir; Snoj, Luka; Makino, Takahiro; Ohshima, Takeshi; Pastuović, Željko; Capan, Ivana (2021) 4H-SiC Schottky barrier diodes for efficient thermal neutron detection. Materials, 14 (17). ISSN 1996-1944

Capan, Ivana; Coutinho, José; Radulović, Vladimir; Makino, Takahiro (2021) Editorial for the special issue on “Crystalline materials for radiation detection: a new perspective”. Crystals, 11 (8). ISSN 2073-4352

Brodar, Tomislav; Bakrač, Luka; Capan, Ivana; Ohshima, Takeshi; Snoj, Luka; Radulović, Vladimir; Pastuović, Željko (2020) Depth Profile Analysis of Deep Level Defects in 4H- SiC Introduced by Radiation. Crystals, 10 (9). ISSN 2073-4352

Kovačić, Marin; Perović, Klara; Papac, Josipa; Tomić, Antonija; Matoh, Lev; Žener, Boštjan; Brodar, Tomislav; Capan, Ivana; Surca, Angelja K.; Kušić, Hrvoje; Štangar, Urška Lavrenčič; Lončarić Božić, Ana (2020) One-Pot Synthesis of Sulfur-Doped TiO2/Reduced Graphene Oxide Composite (S-TiO2/rGO) with Improved Photocatalytic Activity for the Removal of Diclofenac from Water. Materials, 13 (7). ISSN 1996-1944

Radulović, Vladimir; Yamazaki, Yuichi; Pastuović, Željko; Sarbutt, Adam; Ambrožič, Klemen; Bernat, Robert; Ereš, Zoran; Coutinho, José; Ohshima, Takeshi; Capan, Ivana; Snoj, Luka (2020) Silicon carbide neutron detector testing at the JSI TRIGA reactor for enhanced border and port security. Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 972 . ISSN 0168-9002

Capan, Ivana; Yamazaki, Yuichi; Oki, Yuya; Brodar, Tomislav; Makino, Takahiro; Ohshima, Takeshi (2019) Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes. Crystals, 9 (7). ISSN 2073-4352

Brodar, Tomislav; Capan, Ivana; Radulović, Vladimir; Snoj, Luka; Pastuović, Željko; Coutinho, José; Ohshima, Takeshi (2018) Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 437 . pp. 27-31. ISSN 0168-583X

Capan, Ivana; Brodar, Tomislav; Pastuović, Željko; Siegele, Rainer; Ohshima, Takeshi; Sato, Shin-ichiro; Makino, Takahiro; Snoj, Luka; Radulović, Vladimir; Coutinho, José; Torres, Vitor J. B.; Demmouche, Kamel (2018) Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study. Journal of Applied Physics, 123 (16). p. 161597. ISSN 0021-8979

Capan, Ivana; Brodar, Tomislav; Coutinho, José; Ohshima, Takeshi; Markevich, Vladimir P.; Peaker, Anthony R. (2018) Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling. Journal of Applied Physics, 124 (24). p. 245701. ISSN 0021-8979

Pastuović, Željko; Siegele, Rainer; Capan, Ivana; Brodar, Tomislav; Sato, Shin-ichiro; Ohshima, Takeshi (2017) Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime. Journal of Physics: Condensed Matter, 29 (47). p. 475701. ISSN 0953-8984

Pastuović, Željko; Ionescu, Mihail; Vittone, Ettore; Capan, Ivana (2016) Accelerator-Based Nuclear Techniques for Processing and Characterization of Oxide Semiconductors for Solar Energy Conversion. Solid State Phenomena, 253 . pp. 59-142. ISSN 1012-0394

Pivac, Branko; Dubček, Pavo; Capan, Ivana; Zorc, Hrvoje; Dasović, Jasna; Bernstorff, Sigrid; Wu, Marvin; Vlahović, Branislav (2013) GISAXS study of Si nanostructures in SiO2 matrix for solar cell applications. physica status solidi (a), 210 (4). pp. 755-759. ISSN 1862-6300

Capan, Ivana; Janicki, Vesna; Jaćimović, Radojko; Pivac, Branko (2012) C–V and DLTS studies of radiation induced Si–SiO2 interface defects. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 282 (1). pp. 59-62. ISSN 0168-583X

Pivac, Branko; Dubček, Pavo; Capan, Ivana; Zulim, Ivan; Betti, Tihomir; Zorc, Hrvoje; Bernstorff, Sigrid (2009) Nano Si Superlattices for the Next Generation Solar Cells. Journal of Nanoscience and Nanotechnology, 9 (6). pp. 3853-3857. ISSN 1533-4880

Pivac, Branko; Dubček, Pavo; Capan, Ivana; Zorc, Hrvoje; Bernstorff, S.; Duguay, S.; Slaoui, A. (2008) Structural analysis of annealed amorphous SiO/SiO2 superlattice. Thin Solid Films, 516 (20). pp. 6796-6799. ISSN 0040-6090

Conference or workshop item published in conference proceedings

Capan, Ivana; Brodar, Tomislav; Ohshima, Takeshi; Sato, Shinichiro; Makino, Takahiro; Pastuovic, Željko; Siegele, Rainer; Snoj, Luka; Radulović, Vadimir; Coutinho, José; Torres, Vitor J.B.; Demmouche, Kamel (2018) Deep Level Defects in 4H-SiC Epitaxial Layers. In: Deep Level Defects in 4H-SiC Epitaxial Layers. pp. 225-228 .

This list was generated on Wed Oct 4 16:12:23 2023 CEST.
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