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Deep Level Defects in 4H-SiC Epitaxial Layers

Capan, Ivana; Brodar, Tomislav; Ohshima, Takeshi; Sato, Shinichiro; Makino, Takahiro; Pastuovic, Željko; Siegele, Rainer; Snoj, Luka; Radulović, Vadimir; Coutinho, José; Torres, Vitor J.B.; Demmouche, Kamel (2018) Deep Level Defects in 4H-SiC Epitaxial Layers. In: Deep Level Defects in 4H-SiC Epitaxial Layers. pp. 225-228 .

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We present a study of electrically active radiation-induced defects formed in 4H-SiC epitaxial layers following irradiation with fast neutrons, as well as 600 keV H+ and 2 MeV He++ ion implantations. We also look at electron emission energies and mechanisms of the carbon vacancy in 4H-SiC by means of first-principles modelling. Combining the relative stability of carbon vacancies at different sites with the relative amplitude of the observed Laplace-DLTS peaks, we were able to connect Z1 and Z2 to emissions from double negatively charged carbon vacancies located at the h- and k-sites, respectively.

Item Type: Conference or workshop item published in conference proceedings (UNSPECIFIED)
Uncontrolled Keywords: 4H-SiC; Carbon Vacancy; Deep Level Defects; DLTS; Ion Implantation; Neutrons
NATURAL SCIENCES > Physics > Condensed Matter Physics
Divisions: Division of Materials Physics
Project titleProject leaderProject codeProject type
e-SiCureIvana Capan985215NATO SPS programme
Depositing User: Tomislav Brodar
Date Deposited: 05 Mar 2019 09:04
Last Modified: 13 Mar 2019 11:18
DOI: 10.4028/

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