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C–V and DLTS studies of radiation induced Si–SiO2 interface defects

Capan, Ivana; Janicki, Vesna; Jaćimović, Radojko; Pivac, Branko (2012) C–V and DLTS studies of radiation induced Si–SiO2 interface defects. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 282 (1). pp. 59-62. ISSN 0168-583X

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Abstract

Interface traps at the Si–SiO2 interface have been and will be an important performance limit in many (future) semiconductor devices. In this paper, we present a study of fast neutron radiation induced changes in the density of Si–SiO2 interface-related defects. Interface related defects (Pb centers) are detected before and upon the irradiation. The density of interface-related defects is increasing with the fast neutron fluence.

Item Type: Article
Uncontrolled Keywords: interface; radiation; defects; C–V; DLTS
Subjects: NATURAL SCIENCES > Physics
NATURAL SCIENCES > Physics > Nuclear Physics
NATURAL SCIENCES > Physics > Atomic and Molecular Physics
Divisions: Division of Laser and Atomic Research and Development
Division of Materials Physics
Projects:
Project titleProject leaderProject codeProject type
Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima[67912] Branko Pivac098-0982886-2866MZOS
Optička svojstva nanostrukturnih slojeva[119546] Hrvoje Zorc098-0000000-3191MZOS
Depositing User: Vesna Janicki
Date Deposited: 03 Nov 2014 09:57
Last Modified: 03 Nov 2014 10:15
URI: http://fulir.irb.hr/id/eprint/1576
DOI: 10.1016/j.nimb.2011.08.065

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