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M-Center in Neutron-Irradiated 4H-SiC

Capan, Ivana; Brodar, Tomislav; Makino, Takahiro; Radulović, Vladimir; Snoj, Luka (2021) M-Center in Neutron-Irradiated 4H-SiC. Crystals, 11 (11). ISSN 2073-4352

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We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy (Vc), silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep-level defects, all arising from the metastable defect, the M-center. The metastable deep-level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep-level defect, M4, recently observed in ion-implanted 4H-SiC, has been additionally confirmed in neutron-irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects

Item Type: Article
Uncontrolled Keywords: defects; 4H-SiC; DLTS; neutrons
Subjects: NATURAL SCIENCES > Chemistry
Divisions: Division of Materials Physics
Depositing User: Kristina Ciglar
Date Deposited: 07 Apr 2022 14:01
DOI: 10.3390/cryst11111404

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