Items where Author is "Brodar, Tomislav"

Article

Capan, Ivana; Brodar, Tomislav; Makino, Takahiro; Radulović, Vladimir; Snoj, Luka (2021) M-Center in Neutron-Irradiated 4H-SiC. Crystals, 11 (11). ISSN 2073-4352

Bernat, Robert; Capan, Ivana; Bakrač, Luka; Brodar, Tomislav; Makino, Takahiro; Ohshima, Takeshi; Pastuović, Željko; Sarbutt, Adam (2021) Response of 4H-SiC Detectors to Ionizing Particles. Crystals, 11 (1). ISSN 2073-4352

Panžić, Ivana; Capan, Ivana; Brodar, Tomislav; Bafti, Arijeta; Mandić, Vilko (2021) Structural and Electrical Characterization of Pure and Al-Doped ZnO Nanorods. Materials, 14 (23). ISSN 1996-1944

Brodar, Tomislav; Bakrač, Luka; Capan, Ivana; Ohshima, Takeshi; Snoj, Luka; Radulović, Vladimir; Pastuović, Željko (2020) Depth Profile Analysis of Deep Level Defects in 4H- SiC Introduced by Radiation. Crystals, 10 (9). ISSN 2073-4352

Kovačić, Marin; Perović, Klara; Papac, Josipa; Tomić, Antonija; Matoh, Lev; Žener, Boštjan; Brodar, Tomislav; Capan, Ivana; Surca, Angelja K.; Kušić, Hrvoje; Štangar, Urška Lavrenčič; Lončarić Božić, Ana (2020) One-Pot Synthesis of Sulfur-Doped TiO2/Reduced Graphene Oxide Composite (S-TiO2/rGO) with Improved Photocatalytic Activity for the Removal of Diclofenac from Water. Materials, 13 (7). ISSN 1996-1944

Capan, Ivana; Yamazaki, Yuichi; Oki, Yuya; Brodar, Tomislav; Makino, Takahiro; Ohshima, Takeshi (2019) Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes. Crystals, 9 (7). ISSN 2073-4352

Brodar, Tomislav; Capan, Ivana; Radulović, Vladimir; Snoj, Luka; Pastuović, Željko; Coutinho, José; Ohshima, Takeshi (2018) Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 437 . pp. 27-31. ISSN 0168-583X

Capan, Ivana; Brodar, Tomislav; Pastuović, Željko; Siegele, Rainer; Ohshima, Takeshi; Sato, Shin-ichiro; Makino, Takahiro; Snoj, Luka; Radulović, Vladimir; Coutinho, José; Torres, Vitor J. B.; Demmouche, Kamel (2018) Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study. Journal of Applied Physics, 123 (16). p. 161597. ISSN 0021-8979

Capan, Ivana; Brodar, Tomislav; Coutinho, José; Ohshima, Takeshi; Markevich, Vladimir P.; Peaker, Anthony R. (2018) Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling. Journal of Applied Physics, 124 (24). p. 245701. ISSN 0021-8979

Pastuović, Željko; Siegele, Rainer; Capan, Ivana; Brodar, Tomislav; Sato, Shin-ichiro; Ohshima, Takeshi (2017) Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime. Journal of Physics: Condensed Matter, 29 (47). p. 475701. ISSN 0953-8984

Conference or workshop item published in conference proceedings

Capan, Ivana; Brodar, Tomislav; Ohshima, Takeshi; Sato, Shinichiro; Makino, Takahiro; Pastuovic, Željko; Siegele, Rainer; Snoj, Luka; Radulović, Vadimir; Coutinho, José; Torres, Vitor J.B.; Demmouche, Kamel (2018) Deep Level Defects in 4H-SiC Epitaxial Layers. In: Deep Level Defects in 4H-SiC Epitaxial Layers. pp. 225-228 .