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Items where Author is "Makino, Takahiro"

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Number of items: 8.

Knežević, Tihomir; Hadžipašić, Amira; Ohshima, Takeshi; Makino, Takahiro; Capan, Ivana (2022) M-center in low-energy electron irradiated 4H-SiC. Applied Physics Letters, 120 (25). ISSN 0003-6951

Capan, Ivana; Brodar, Tomislav; Makino, Takahiro; Radulović, Vladimir; Snoj, Luka (2021) M-Center in Neutron-Irradiated 4H-SiC. Crystals, 11 (11). ISSN 2073-4352

Bernat, Robert; Capan, Ivana; Bakrač, Luka; Brodar, Tomislav; Makino, Takahiro; Ohshima, Takeshi; Pastuović, Željko; Sarbutt, Adam (2021) Response of 4H-SiC Detectors to Ionizing Particles. Crystals, 11 (1). ISSN 2073-4352

Bernat, Robert; Bakrač, Luka; Radulović, Vladimir; Snoj, Luka; Makino, Takahiro; Ohshima, Takeshi; Pastuović, Željko; Capan, Ivana (2021) 4H-SiC Schottky barrier diodes for efficient thermal neutron detection. Materials, 14 (17). ISSN 1996-1944

Capan, Ivana; Coutinho, José; Radulović, Vladimir; Makino, Takahiro (2021) Editorial for the special issue on “Crystalline materials for radiation detection: a new perspective”. Crystals, 11 (8). ISSN 2073-4352

Capan, Ivana; Yamazaki, Yuichi; Oki, Yuya; Brodar, Tomislav; Makino, Takahiro; Ohshima, Takeshi (2019) Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes. Crystals, 9 (7). ISSN 2073-4352

Capan, Ivana; Brodar, Tomislav; Pastuović, Željko; Siegele, Rainer; Ohshima, Takeshi; Sato, Shin-ichiro; Makino, Takahiro; Snoj, Luka; Radulović, Vladimir; Coutinho, José; Torres, Vitor J. B.; Demmouche, Kamel (2018) Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study. Journal of Applied Physics, 123 (16). p. 161597. ISSN 0021-8979

Capan, Ivana; Brodar, Tomislav; Ohshima, Takeshi; Sato, Shinichiro; Makino, Takahiro; Pastuovic, Željko; Siegele, Rainer; Snoj, Luka; Radulović, Vadimir; Coutinho, José; Torres, Vitor J.B.; Demmouche, Kamel (2018) Deep Level Defects in 4H-SiC Epitaxial Layers. In: Deep Level Defects in 4H-SiC Epitaxial Layers. pp. 225-228 .

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