Defects in Silicon Carbide as Quantum Qubits: Recent Advances in Defect Engineering

Capan, Ivana (2025) Defects in Silicon Carbide as Quantum Qubits: Recent Advances in Defect Engineering. Applied Sciences, 15 (10). ISSN 2076-3417

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Abstract

This review provides an overview of defects in silicon carbide (SiC) with potential applications as quantum qubits. It begins with a brief introduction to quantum qubits and existing qubit platforms, outlining the essential criteria a defect must meet to function as a viable qubit. The focus then shifts to the most promising defects in SiC, notably the silicon vacancy (VSi) and divacancy (VC-VSi). A key challenge in utilizing these defects for quantum applications is their precise and controllable creation. Various fabrication techniques, including irradiation, ion implantation, femtosecond laser processing, and focused ion beam methods, have been explored to create these defects. Designed as a beginner-friendly resource, this review aims to support early-career experimental researchers entering the field of SiC-related quantum qubits. Providing an introduction to defect-based qubits in SiC offers valuable insights into fabrication strategies, recent progress, and the challenges that lie ahead.

Item Type:	Article
Uncontrolled Keywords:	silicon carbide; defects; quantum qubits
Subjects:	NATURAL SCIENCES > Physics > Condensed Matter Physics
Divisions:	Division of Materials Physics
Depositing User:	Ana Zečević
Date Deposited:	10 Dec 2025 15:59
URI:	http://fulir.irb.hr/id/eprint/10371
DOI:	10.3390/app15105606

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