Capan, Ivana; Brodar, Tomislav; Ohshima, Takeshi; Sato, Shinichiro; Makino, Takahiro; Pastuovic, Željko; Siegele, Rainer; Snoj, Luka; Radulović, Vadimir; Coutinho, José; Torres, Vitor J.B.; Demmouche, Kamel (2018) Deep Level Defects in 4H-SiC Epitaxial Layers. In: Deep Level Defects in 4H-SiC Epitaxial Layers. pp. 225-228 .
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Abstract
We present a study of electrically active radiation-induced defects formed in 4H-SiC epitaxial layers following irradiation with fast neutrons, as well as 600 keV H+ and 2 MeV He++ ion implantations. We also look at electron emission energies and mechanisms of the carbon vacancy in 4H-SiC by means of first-principles modelling. Combining the relative stability of carbon vacancies at different sites with the relative amplitude of the observed Laplace-DLTS peaks, we were able to connect Z1 and Z2 to emissions from double negatively charged carbon vacancies located at the h- and k-sites, respectively.
| Item Type: | Conference or workshop item published in conference proceedings (UNSPECIFIED) | ||||||||
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| Uncontrolled Keywords: | 4H-SiC; Carbon Vacancy; Deep Level Defects; DLTS; Ion Implantation; Neutrons | ||||||||
| Subjects: | NATURAL SCIENCES NATURAL SCIENCES > Physics NATURAL SCIENCES > Physics > Condensed Matter Physics |
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| Divisions: | Division of Materials Physics | ||||||||
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| Depositing User: | Tomislav Brodar | ||||||||
| Date Deposited: | 05 Mar 2019 09:04 | ||||||||
| URI: | http://fulir.irb.hr/id/eprint/4433 | ||||||||
| DOI: | 10.4028/www.scientific.net/MSF.924.225 |
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