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Response of GaN to energetic ion irradiation: conditions for ion track formation

Karlušić, Marko; Kozubek, R.; Lebius, H.; Ban d'Etat, B.; Wilhelm, R.A.; Buljan, M.; Siketić, Zdravko; Scholz, F.; Meisch, T.; Jakšić, Milko; Bernstorff, S.; Schleberger, M.; Šantić, Branko (2015) Response of GaN to energetic ion irradiation: conditions for ion track formation. Journal of Physics D: Applied Physics, 48 . 325304/1-325304/12. ISSN 0022-3727

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We investigated the response of wurzite GaN thin films to energetic ion irradiation. Both swift heavy ions (92 MeV Xe23+, 23 MeV I6+) and highly charged ions (100 keV Xe40+) were used. After irradiation, the samples were investigated using atomic force microscopy, grazing incidence small angle X-ray scattering, Rutherford backscattering spectroscopy in channelling orientation and time of flight elastic recoil detection analysis. Only grazing incidence swift heavy ion irradiation induced changes on the surface of the GaN, when the appearance of nanoholes is accompanied by a notable loss of nitrogen. The results are discussed in the framework of the thermal spike model.

Item Type: Article
Uncontrolled Keywords: GaN; swift heavy ion; highly charged ion; ion track; thermal spike
Subjects: NATURAL SCIENCES > Physics > Condensed Matter Physics
Divisions: Division of Experimental Physics
Division of Materials Physics
Project titleProject leaderProject codeProject type
Center of Excellence for Advanced Materials and Sensing Devicesdr. Milko JakšićUNSPECIFIEDCEMS
MeV Ion Beam Induced Changes in Crystaline Materials (Promjene u kristaliničnim materijalima izazvane ionskim snopovima MeV-skih energija)-MIOBICCStjepko FazinićIP-11-2013-8127HRZZ
Nano-networks of Quantum Dots in Glasses: From Self-assembly to Energy Conversion and Hydrogen Storage (Nano-mreže kvantnih točaka u staklima: Od samouređenja do pretvorbe energije i pohrane vodika)-NanoDeSignMaja BuljanUIP-11-2013-2334HRZZ
Depositing User: Marko Karlušić
Date Deposited: 02 Nov 2015 09:59
DOI: 10.1088/0022-3727/48/32/325304

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