C–V and DLTS studies of radiation induced Si–SiO2 interface defects

Capan, Ivana; Janicki, Vesna; Jaćimović, Radojko; Pivac, Branko (2012) C–V and DLTS studies of radiation induced Si–SiO2 interface defects. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 282 (1). pp. 59-62. ISSN 0168-583X

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Abstract

Interface traps at the Si–SiO2 interface have been and will be an important performance limit in many (future) semiconductor devices. In this paper, we present a study of fast neutron radiation induced changes in the density of Si–SiO2 interface-related defects. Interface related defects (Pb centers) are detected before and upon the irradiation. The density of interface-related defects is increasing with the fast neutron fluence.

Item Type:	Article
Uncontrolled Keywords:	interface; radiation; defects; C–V; DLTS
Subjects:	NATURAL SCIENCES > Physics NATURAL SCIENCES > Physics > Nuclear Physics NATURAL SCIENCES > Physics > Atomic and Molecular Physics
Divisions:	Division of Laser and Atomic Research and Development Division of Materials Physics
Projects:	Project title Project leader Project code Project type Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima [67912] Branko Pivac 098-0982886-2866 MZOS Optička svojstva nanostrukturnih slojeva [119546] Hrvoje Zorc 098-0000000-3191 MZOS
Depositing User:	Vesna Janicki
Date Deposited:	03 Nov 2014 09:57
URI:	http://fulir.irb.hr/id/eprint/1576
DOI:	10.1016/j.nimb.2011.08.065

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