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Number of items: 5.

Article

Ditalia Tchernij, S.; Lühmann, T.; Corte, E.; Sardi, F.; Picollo, F.; Traina, P.; Brajković, Marko; Crnjac, Andreo; Pezzagna, S.; Pastuović, Željko; Degiovanni, I.P; Moreva, E.; Aprà, P.; Olivero, P.; Siketić, Zdravko; Meijer, J.; Genovese, M.; Forneris, J. (2020) Fluorine-based color centers in diamond. Scientific reports, 10 . ISSN 2045-2322

Brodar, Tomislav; Capan, Ivana; Radulović, Vladimir; Snoj, Luka; Pastuović, Željko; Coutinho, José; Ohshima, Takeshi (2018) Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 437 . pp. 27-31. ISSN 0168-583X

Capan, Ivana; Brodar, Tomislav; Pastuović, Željko; Siegele, Rainer; Ohshima, Takeshi; Sato, Shin-ichiro; Makino, Takahiro; Snoj, Luka; Radulović, Vladimir; Coutinho, José; Torres, Vitor J. B.; Demmouche, Kamel (2018) Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study. Journal of Applied Physics, 123 (16). p. 161597. ISSN 0021-8979

Pastuović, Željko; Siegele, Rainer; Capan, Ivana; Brodar, Tomislav; Sato, Shin-ichiro; Ohshima, Takeshi (2017) Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime. Journal of Physics: Condensed Matter, 29 (47). p. 475701. ISSN 0953-8984

Pastuović, Željko; Ionescu, Mihail; Vittone, Ettore; Capan, Ivana (2016) Accelerator-Based Nuclear Techniques for Processing and Characterization of Oxide Semiconductors for Solar Energy Conversion. Solid State Phenomena, 253 . pp. 59-142. ISSN 1012-0394

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