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Number of items: 6.

Article

Brodar, Tomislav; Capan, Ivana; Radulović, Vladimir; Snoj, Luka; Pastuović, Željko; Coutinho, José; Ohshima, Takeshi (2018) Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 437 . pp. 27-31. ISSN 0168-583X

Capan, Ivana; Brodar, Tomislav; Pastuović, Željko; Siegele, Rainer; Ohshima, Takeshi; Sato, Shin-ichiro; Makino, Takahiro; Snoj, Luka; Radulović, Vladimir; Coutinho, José; Torres, Vitor J. B.; Demmouche, Kamel (2018) Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study. Journal of Applied Physics, 123 (16). p. 161597. ISSN 0021-8979

Capan, Ivana; Brodar, Tomislav; Coutinho, José; Ohshima, Takeshi; Markevich, Vladimir P.; Peaker, Anthony R. (2018) Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling. Journal of Applied Physics, 124 (24). p. 245701. ISSN 0021-8979

Pastuović, Željko; Siegele, Rainer; Capan, Ivana; Brodar, Tomislav; Sato, Shin-ichiro; Ohshima, Takeshi (2017) Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime. Journal of Physics: Condensed Matter, 29 (47). p. 475701. ISSN 0953-8984

Grilj, Veljko; Skukan, Natko; Jakšić, Milko; Pomorski, Michal; Kada, Wataru; Kamiya, Tomihiro; Iwamoto, Naoya; Ohshima, Takeshi (2013) An ultra-thin diamond membrane as a transmission particle detector and vacuum window for external microbeams. Applied Physics Letters, 103 . 243106-1-243106-4. ISSN 0003-6951

Conference or workshop item published in conference proceedings

Capan, Ivana; Brodar, Tomislav; Ohshima, Takeshi; Sato, Shinichiro; Makino, Takahiro; Pastuovic, Željko; Siegele, Rainer; Snoj, Luka; Radulović, Vadimir; Coutinho, José; Torres, Vitor J.B.; Demmouche, Kamel (2018) Deep Level Defects in 4H-SiC Epitaxial Layers. In: Deep Level Defects in 4H-SiC Epitaxial Layers. pp. 225-228 .

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