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Capan, Ivana; Brodar, Tomislav; Makino, Takahiro; Radulović, Vladimir; Snoj, Luka (2021) M-Center in Neutron-Irradiated 4H-SiC. Crystals, 11 (11). ISSN 2073-4352
Bernat, Robert; Bakrač, Luka; Radulović, Vladimir; Snoj, Luka; Makino, Takahiro; Ohshima, Takeshi; Pastuović, Željko; Capan, Ivana (2021) 4H-SiC Schottky barrier diodes for efficient thermal neutron detection. Materials, 14 (17). ISSN 1996-1944
Brodar, Tomislav; Bakrač, Luka; Capan, Ivana; Ohshima, Takeshi; Snoj, Luka; Radulović, Vladimir; Pastuović, Željko (2020) Depth Profile Analysis of Deep Level Defects in 4H- SiC Introduced by Radiation. Crystals, 10 (9). ISSN 2073-4352
Radulović, Vladimir; Yamazaki, Yuichi; Pastuović, Željko; Sarbutt, Adam; Ambrožič, Klemen; Bernat, Robert; Ereš, Zoran; Coutinho, José; Ohshima, Takeshi; Capan, Ivana; Snoj, Luka (2020) Silicon carbide neutron detector testing at the JSI TRIGA reactor for enhanced border and port security. Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 972 . ISSN 0168-9002
Brodar, Tomislav; Capan, Ivana; Radulović, Vladimir; Snoj, Luka; Pastuović, Željko; Coutinho, José; Ohshima, Takeshi (2018) Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 437 . pp. 27-31. ISSN 0168-583X
Capan, Ivana; Brodar, Tomislav; Pastuović, Željko; Siegele, Rainer; Ohshima, Takeshi; Sato, Shin-ichiro; Makino, Takahiro; Snoj, Luka; Radulović, Vladimir; Coutinho, José; Torres, Vitor J. B.; Demmouche, Kamel (2018) Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study. Journal of Applied Physics, 123 (16). p. 161597. ISSN 0021-8979
Capan, Ivana; Brodar, Tomislav; Ohshima, Takeshi; Sato, Shinichiro; Makino, Takahiro; Pastuovic, Željko; Siegele, Rainer; Snoj, Luka; Radulović, Vadimir; Coutinho, José; Torres, Vitor J.B.; Demmouche, Kamel (2018) Deep Level Defects in 4H-SiC Epitaxial Layers. In: Deep Level Defects in 4H-SiC Epitaxial Layers. pp. 225-228 .
