Items where Author is "Pastuović, Željko"

Article

Bernat, Robert; Capan, Ivana; Bakrač, Luka; Brodar, Tomislav; Makino, Takahiro; Ohshima, Takeshi; Pastuović, Željko; Sarbutt, Adam (2021) Response of 4H-SiC Detectors to Ionizing Particles. Crystals, 11 (1). ISSN 2073-4352

Bernat, Robert; Bakrač, Luka; Radulović, Vladimir; Snoj, Luka; Makino, Takahiro; Ohshima, Takeshi; Pastuović, Željko; Capan, Ivana (2021) 4H-SiC Schottky barrier diodes for efficient thermal neutron detection. Materials, 14 (17). ISSN 1996-1944

Brodar, Tomislav; Bakrač, Luka; Capan, Ivana; Ohshima, Takeshi; Snoj, Luka; Radulović, Vladimir; Pastuović, Željko (2020) Depth Profile Analysis of Deep Level Defects in 4H- SiC Introduced by Radiation. Crystals, 10 (9). ISSN 2073-4352

Ditalia Tchernij, S.; Lühmann, T.; Corte, E.; Sardi, F.; Picollo, F.; Traina, P.; Brajković, Marko; Crnjac, Andreo; Pezzagna, S.; Pastuović, Željko; Degiovanni, I.P; Moreva, E.; Aprà, P.; Olivero, P.; Siketić, Zdravko; Meijer, J.; Genovese, M.; Forneris, J. (2020) Fluorine-based color centers in diamond. Scientific reports, 10 . ISSN 2045-2322

Radulović, Vladimir; Yamazaki, Yuichi; Pastuović, Željko; Sarbutt, Adam; Ambrožič, Klemen; Bernat, Robert; Ereš, Zoran; Coutinho, José; Ohshima, Takeshi; Capan, Ivana; Snoj, Luka (2020) Silicon carbide neutron detector testing at the JSI TRIGA reactor for enhanced border and port security. Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 972 . ISSN 0168-9002

Brodar, Tomislav; Capan, Ivana; Radulović, Vladimir; Snoj, Luka; Pastuović, Željko; Coutinho, José; Ohshima, Takeshi (2018) Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 437 . pp. 27-31. ISSN 0168-583X

Capan, Ivana; Brodar, Tomislav; Pastuović, Željko; Siegele, Rainer; Ohshima, Takeshi; Sato, Shin-ichiro; Makino, Takahiro; Snoj, Luka; Radulović, Vladimir; Coutinho, José; Torres, Vitor J. B.; Demmouche, Kamel (2018) Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study. Journal of Applied Physics, 123 (16). p. 161597. ISSN 0021-8979

Pastuović, Željko; Siegele, Rainer; Capan, Ivana; Brodar, Tomislav; Sato, Shin-ichiro; Ohshima, Takeshi (2017) Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime. Journal of Physics: Condensed Matter, 29 (47). p. 475701. ISSN 0953-8984

Pastuović, Željko; Ionescu, Mihail; Vittone, Ettore; Capan, Ivana (2016) Accelerator-Based Nuclear Techniques for Processing and Characterization of Oxide Semiconductors for Solar Energy Conversion. Solid State Phenomena, 253 . pp. 59-142. ISSN 1012-0394

Conference or workshop item published in conference proceedings

Capan, Ivana; Brodar, Tomislav; Ohshima, Takeshi; Sato, Shinichiro; Makino, Takahiro; Pastuovic, Željko; Siegele, Rainer; Snoj, Luka; Radulović, Vadimir; Coutinho, José; Torres, Vitor J.B.; Demmouche, Kamel (2018) Deep Level Defects in 4H-SiC Epitaxial Layers. In: Deep Level Defects in 4H-SiC Epitaxial Layers. pp. 225-228 .