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Items where Author is "Ohshima, Takeshi"

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Number of items: 12.

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Knežević, Tihomir; Hadžipašić, Amira; Ohshima, Takeshi; Makino, Takahiro; Capan, Ivana (2022) M-center in low-energy electron irradiated 4H-SiC. Applied Physics Letters, 120 (25). ISSN 0003-6951

Bernat, Robert; Capan, Ivana; Bakrač, Luka; Brodar, Tomislav; Makino, Takahiro; Ohshima, Takeshi; Pastuović, Željko; Sarbutt, Adam (2021) Response of 4H-SiC Detectors to Ionizing Particles. Crystals, 11 (1). ISSN 2073-4352

Bernat, Robert; Bakrač, Luka; Radulović, Vladimir; Snoj, Luka; Makino, Takahiro; Ohshima, Takeshi; Pastuović, Željko; Capan, Ivana (2021) 4H-SiC Schottky barrier diodes for efficient thermal neutron detection. Materials, 14 (17). ISSN 1996-1944

Brodar, Tomislav; Bakrač, Luka; Capan, Ivana; Ohshima, Takeshi; Snoj, Luka; Radulović, Vladimir; Pastuović, Željko (2020) Depth Profile Analysis of Deep Level Defects in 4H- SiC Introduced by Radiation. Crystals, 10 (9). ISSN 2073-4352

Radulović, Vladimir; Yamazaki, Yuichi; Pastuović, Željko; Sarbutt, Adam; Ambrožič, Klemen; Bernat, Robert; Ereš, Zoran; Coutinho, José; Ohshima, Takeshi; Capan, Ivana; Snoj, Luka (2020) Silicon carbide neutron detector testing at the JSI TRIGA reactor for enhanced border and port security. Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 972 . ISSN 0168-9002

Capan, Ivana; Yamazaki, Yuichi; Oki, Yuya; Brodar, Tomislav; Makino, Takahiro; Ohshima, Takeshi (2019) Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes. Crystals, 9 (7). ISSN 2073-4352

Brodar, Tomislav; Capan, Ivana; Radulović, Vladimir; Snoj, Luka; Pastuović, Željko; Coutinho, José; Ohshima, Takeshi (2018) Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 437 . pp. 27-31. ISSN 0168-583X

Capan, Ivana; Brodar, Tomislav; Pastuović, Željko; Siegele, Rainer; Ohshima, Takeshi; Sato, Shin-ichiro; Makino, Takahiro; Snoj, Luka; Radulović, Vladimir; Coutinho, José; Torres, Vitor J. B.; Demmouche, Kamel (2018) Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study. Journal of Applied Physics, 123 (16). p. 161597. ISSN 0021-8979

Capan, Ivana; Brodar, Tomislav; Coutinho, José; Ohshima, Takeshi; Markevich, Vladimir P.; Peaker, Anthony R. (2018) Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling. Journal of Applied Physics, 124 (24). p. 245701. ISSN 0021-8979

Pastuović, Željko; Siegele, Rainer; Capan, Ivana; Brodar, Tomislav; Sato, Shin-ichiro; Ohshima, Takeshi (2017) Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime. Journal of Physics: Condensed Matter, 29 (47). p. 475701. ISSN 0953-8984

Grilj, Veljko; Skukan, Natko; Jakšić, Milko; Pomorski, Michal; Kada, Wataru; Kamiya, Tomihiro; Iwamoto, Naoya; Ohshima, Takeshi (2013) An ultra-thin diamond membrane as a transmission particle detector and vacuum window for external microbeams. Applied Physics Letters, 103 . 243106-1-243106-4. ISSN 0003-6951

Conference or workshop item published in conference proceedings

Capan, Ivana; Brodar, Tomislav; Ohshima, Takeshi; Sato, Shinichiro; Makino, Takahiro; Pastuovic, Željko; Siegele, Rainer; Snoj, Luka; Radulović, Vadimir; Coutinho, José; Torres, Vitor J.B.; Demmouche, Kamel (2018) Deep Level Defects in 4H-SiC Epitaxial Layers. In: Deep Level Defects in 4H-SiC Epitaxial Layers. pp. 225-228 .

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