Wide-Bandgap Semiconductors for Radiation Detection: A Review

Capan, Ivana (2024) Wide-Bandgap Semiconductors for Radiation Detection: A Review. Materials, 17 (5). ISSN 1996-1944

PDF - Published Version - article Available under License Creative Commons Attribution. Download (3MB)

Abstract

In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used for radiation detection are described. The 4H-SiC and GaN devices have already achieved exceptional results in the detection of alpha particles and neutrons, thermal neutrons in particular. While β-Ga2O3 devices have not yet reached the same level of technological maturity (compared to 4H-SiC and GaN), their current achievements for X-ray detection indicate great potential and promising prospects for future applications.

Item Type:	Article
Uncontrolled Keywords:	wide-bandgap semiconductors; radiation; detectors
Subjects:	NATURAL SCIENCES > Physics NATURAL SCIENCES > Chemistry > Physical Chemistry
Divisions:	Division of Materials Physics
Depositing User:	Sanja Jurković
Date Deposited:	17 Apr 2025 13:30
URI:	http://fulir.irb.hr/id/eprint/9712
DOI:	10.3390/ma17051147

Actions (login required)

View Item