hrvatski jezikClear Cookie - decide language by browser settings

TiO2 nanotubes film/FTO glass interface: Thermal treatment effects

Vujancevic, Jelena; Bjelajac, Andjelika; Veltruska, Katerina; Matolin, Vladimir; Siketić, Zdravko; Provatas, Georgios; Jakšić, Milko; Stan, George; Socol, Gabriel; Mihailescu, Ion; Pavlovic, Vladimir; Janackovic, Djordje (2022) TiO2 nanotubes film/FTO glass interface: Thermal treatment effects. Science of Sintering, 54 (2). pp. 235-248. ISSN 0350-820X

[img] PDF - Published Version - article
Available under License Creative Commons Attribution.

Download (1MB)


Pure Ti films deposited by radio-frequency magnetron sputtering on FTO glass were anodized to fabricate TiO2 nanotubes (NTs) arrays. The TiO2 NTs/FTO samples were sintered at 450, 550 and 630 degrees C, in ambient air. The thermal treatment did not influence the crystal phase composition, preserving in all cases the anatase single phase. As expected, the crystalline anatase quality improved with the annealing temperature. Nevertheless, slight differences in nanotubular morphology, such as the appearance of grains inside the walls, were observed in the case of the sample sintered at 630 degrees C. Chemical analysis by X-ray Photoelectron Spectroscopy of annealed samples revealed the presence of Sn inside TiO2 NTs, due to diffusion of Sn from the substrate to TiO2. For the substrate was used FTO glass whose top layer consists of SnO2 doped with F. Rutherford Backscattering Spectrometry and Time-of-Flight Elastic Recoil Detection Analysis were carried out to study the elemental depth profile of the films. It was found that the temperature of sintering controls the Sn diffusion inside TiO2 film. Sn atoms diffuse towards the TiO2 NTs surface for the samples annealed at 450 and 550 degrees C. The diffusion is however hindered in the case of the heat treatment at 630 degrees C. Besides, the Ti diffusion into the SnO2 underlayer was observed, together with the formation of TiO2/SnO2 interfaces. One then expected but not a great difference in absorption between samples, since all contained anatase phase, as confirmed by Diffuse Reflectance Spectroscopy. A higher amount of Sn was however detected for the sample annealed at 550 degrees C, which accounts for a slight red absorption shift. The importance of controlling the annealing parameters of the anodized TiO2/FTO structures was highlighted through the formation of TiO2-SnO2 interfaces and the Sn insertion from FTO, which can play an essential role in increasing the photoperformances of TiO2 NTs/FTO based structures of photovoltaic cells.

Item Type: Article
Uncontrolled Keywords: Sn diffusion; Sn-TiO2 doping; Sintering; ToF-ERDA; XPS
Subjects: NATURAL SCIENCES > Physics
Divisions: Division of Experimental Physics
Depositing User: Diana Mikoč Radešić
Date Deposited: 02 Feb 2024 09:49
DOI: 10.2298/SOS2202235V

Actions (login required)

View Item View Item


Downloads per month over past year

Increase Font
Decrease Font
Dyslexic Font