Effects of Thermal Oxidation on Sensing Properties of Porous Silicon

Baran, Nikola; Renka, Sanja; Raić, Matea; Ristić, Davor; Ivanda, Mile (2022) Effects of Thermal Oxidation on Sensing Properties of Porous Silicon. Chemosensors, 10 (9). p. 349. ISSN 2227-9040

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Abstract

We report the effects of thermal oxidation on the sensing properties of porous silicon. Porous silicon substrates were prepared by electrochemical etching and thermally oxidized at different temperatures. A comparative EDS analysis shows that porous surfaces oxidized at higher temperatures have higher oxygen-to-silicon ratios. Our results indicate that the chemoresistive response due to the presence of isopropanol vapors at room temperature also increases with an increasing oxidation temperature. The presence of oxygen atoms in the PS layer could both protect the sensor from further atmospheric oxidation and increase its sensitivity.

Item Type:	Article
Uncontrolled Keywords:	porous silicon; gas sensing; VOC; oxidation
Subjects:	NATURAL SCIENCES > Physics
Divisions:	Division of Materials Physics
Depositing User:	Lorena Palameta
Date Deposited:	15 Jan 2024 12:43
URI:	http://fulir.irb.hr/id/eprint/8351
DOI:	10.3390/chemosensors10090349

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