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Vacancy-related defects in n -type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range

Capan, I.; Pastuović, Ž.; Siegele, R.; Jaćimović, R. (2016) Vacancy-related defects in n -type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 372 . pp. 156-160. ISSN 0168-583X

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Abstract

Deep level transient spectroscopy (DLTS) has been used to study vacancy-related defects formed in bulk n-type Czochralski-grown silicon after implantation of accelerated heavy ions: 6.5 MeV O, 10.5 MeV Si, 10.5 MeV Ge, and 11 MeV Er in the single ion regime with fluences from 109 cm−2 to 1010 cm−2 and a direct comparison made with defects formed in the same material irradiated with 0.7 MeV fast neutron fluences up to 1012 cm−2. A scanning ion microprobe was used as the ion implantation tool of n-Cz:Si samples prepared as Schottky diodes, while the ion beam induced current (IBIC) technique was utilized for direct ion counting. The single acceptor state of the divacancy V2(−/0) is the most prominent defect state observed in DLTS spectra of n-CZ:Si samples implanted by selected ions and the sample irradiated by neutrons. The complete suppression of the DLTS signal related to the double acceptor state of divacancy, V2(=/−) has been observed in all samples irradiated by ions and neutrons. Moreover, the DLTS peak associated with formation of the vacancy-oxygen complex VO in the neutron irradiated sample was also completely suppressed in DLTS spectra of samples implanted with the raster scanned ion microbeam. The reason for such behaviour is twofold, (i) the local depletion of the carrier concentration in the highly disordered regions, and (ii) the effect of the microprobe-assisted single ion implantation. The activation energy for electron emission for states assigned to the V2(−/0) defect formed in samples implanted by single ions follows the Meyer–Neldel rule. An increase of the activation energy is strongly correlated with increasing ion mass.

Item Type: Article
Additional Information: The authors wish to acknowledge the support of the Croatian Centre of Excellence for Advanced Materials and Sensing Devices, the Accelerator Science Project (0208) and the IAEA CRP #F11016:, Utilization of ion accelerators for studying and modelling of radiation induced defects in semiconductors and insulators.
Uncontrolled Keywords: ion implantation ; silicon ; defects ; vacancy ; DLTS
Subjects: NATURAL SCIENCES
NATURAL SCIENCES > Physics
NATURAL SCIENCES > Physics > Condensed Matter Physics
Divisions: Division of Materials Physics
Projects:
Project titleProject leaderProject codeProject type
The Croatian Centre of Excellence for Advanced Materials and Sensing Devices, the Accelerator Science ProjectUNSPECIFIED0208UNSPECIFIED
IAEA CRPUNSPECIFIED#F11016UNSPECIFIED
Depositing User: Tomislav Brodar
Date Deposited: 11 Mar 2019 09:36
Last Modified: 13 Mar 2019 11:13
URI: http://fulir.irb.hr/id/eprint/4454
DOI: 10.1016/j.nimb.2015.12.039

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