Capan, Ivana; Brodar, Tomislav; Coutinho, José; Ohshima, Takeshi; Markevich, Vladimir P.; Peaker, Anthony R. (2018) Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling. Journal of Applied Physics, 124 (24). p. 245701. ISSN 0021-8979
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Abstract
We provide direct evidence that the broad Z1/2 peak, commonly observed by conventional deep level transient spectroscopy in as-grown and at high concentrations in radiation damaged 4H-SiC, has two components, namely, Z1 and Z2, with activation energies for electron emissions of 0.59 and 0.67 eV, respectively. We assign these components to Z=1/2→Z−1/2+e−→Z01/2+2e− transition sequences from negative-U ordered acceptor levels of carbon vacancy (VC) defects at hexagonal/pseudo-cubic sites, respectively. By employing short filling pulses at lower temperatures, we were able to characterize the first acceptor level of VC on both sub-lattice sites. Activation energies for electron emission of 0.48 and 0.41 eV were determined for Z1(−/0) and Z2(−/0) transitions, respectively. Based on trap filling kinetics and capture barrier calculations, we investigated the two-step transitions from neutral to doubly negatively charged Z1 and Z2. Positions of the first and second acceptor levels of VC at both lattice sites, as well as (=/0) occupancy levels, were derived from the analysis of the emission and capture data.
| Item Type: | Article | ||||||||||||||||
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| Uncontrolled Keywords: | Epitaxial n-type 4H-SiC; Laplace DLTS; Defects; DFT ; | ||||||||||||||||
| Subjects: | NATURAL SCIENCES NATURAL SCIENCES > Physics NATURAL SCIENCES > Physics > Condensed Matter Physics |
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| Divisions: | Division of Materials Physics | ||||||||||||||||
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| Depositing User: | Tomislav Brodar | ||||||||||||||||
| Date Deposited: | 05 Mar 2019 09:02 | ||||||||||||||||
| URI: | http://fulir.irb.hr/id/eprint/4432 | ||||||||||||||||
| DOI: | 10.1063/1.5063773 |
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