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Enhanced near-infrared response of nano- and microstructured silicon/organic hybrid photodetectors

Derek, Vedran; Głowacki, Eric Daniel; Sytnyk, Mykhailo; Heiss, Wolfgang; Marciuš, Marijan; Ristić, Mira; Ivanda, Mile; Sariciftci, Niyazi Serdar (2015) Enhanced near-infrared response of nano- and microstructured silicon/organic hybrid photodetectors. Applied physics letters, 107 (8). 083302-1. ISSN 0003-6951

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Abstract

Heterojunctions between an organic semiconductor and silicon are an attractive route to extending the response of silicon photodiodes into the near infrared (NIR) range, up to 2000 nm. Silicon-based alternatives are of interest to replace expensive low band-gap materials, like InGaAs, in telecommunications and imaging applications. Herein, we report on the significant enhancement in NIR photodetector performance afforded by nano- and microstructuring of p-doped silicon (p-Si) prior to deposition of a layer of the organic semiconductor Tyrian Purple (TyP). We show how different silicon structuring techniques, namely, electrochemically grown porous Si, metal-assisted chemical etching, and finally micropyramids produced by anisotropic chemical etching (Si μP), are effective in increasing the NIR responsivity of p-Si/TyP heterojunction diodes. In all cases, the structured interfaces were found to give photodiodes with superior characteristics as compared with planar interface devices, providing up to 100-fold improvement in short-circuit photocurrent, corresponding with responsivity values of 1–5  mA/W in the range of 1.3–1.6 μm. Our measurements show this increased performance is neither correlated to optical effects, i.e., light trapping, nor simply to geometric surface area increase by micro- and nanostructuring. We conclude that the performance enhancement afforded by the structured p-Si/organic diodes is caused by a yet unresolved mechanism, possibly related to electric field enhancement near the sharp tips of the structured substrate. The observed responsivity of these devices places them closer to parity with other, well-established, Si-based NIR detection technologies.

Item Type: Article
Uncontrolled Keywords: Interface structure; Photoelectric conversion; Silicon; Telecommunications; Surface structure; Nano-silicon
Subjects: NATURAL SCIENCES > Physics > Atomic and Molecular Physics
NATURAL SCIENCES > Physics > Condensed Matter Physics
NATURAL SCIENCES > Chemistry
NATURAL SCIENCES > Chemistry > Physical Chemistry
Divisions: Division of Materials Physics
Projects:
Project titleProject leaderProject codeProject type
Hibriridne silicijske nanstrukture za senzorik-NANOSENSMile IvandaIP-09-2014-7046HRZZ
Fizika i primjena nanostruktura i volumne tvari-Mile Ivanda098-0982904-2898MZOS
Depositing User: Vedran Đerek
Date Deposited: 28 Nov 2016 15:56
Last Modified: 28 Nov 2016 15:56
URI: http://fulir.irb.hr/id/eprint/3144
DOI: 10.1063/1.4929841

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