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Grain growth from amorphous phase

Očko, Miroslav; Žonja, Sanja; Ivanda, Mile (2014) Grain growth from amorphous phase. AIP Advances, 4 . 037125/1-037125/7. ISSN 2158-3226

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Abstract

Time dependence of the grain growth in phosphorus doped silicon thin films deposited in situ at 530 ◦C was investigated. The samples were annealed at 950 ◦C in different time intervals. The theories, which give the tn time dependent increase of grain size, cannot fit the observed data. We derived a differential equation which describes the grain growth from amorphous phase. Our experimental results and the solution of the differential equation show the effect of grain growth stagnation and even grain growth stop. The solution also comprises all the features of the result of the Monte Carlo simulation of the grain growth of purematerials.

Item Type: Article
Uncontrolled Keywords: grain growth; amorphous phase; Si:P
Subjects: NATURAL SCIENCES > Physics
TECHNICAL SCIENCES > Electrical Engineering
Divisions: Division of Materials Physics
Projects:
Project titleProject leaderProject codeProject type
Fizika i primjena nanostruktura i volumne tvariMile Ivanda098-0982904-2898MZOS
Materijali sa elektronskom strukturom modeliranom modernim tehnikama pripraveIvica Aviani035-0352827-2841MZOS
Sofisticirane poluvodičke strukture za komunikacijsku tehnologijuMarko Koričić036-0982904-1642MZOS
Depositing User: Mile Ivanda
Date Deposited: 14 Jul 2016 14:42
Last Modified: 14 Jul 2016 14:42
URI: http://fulir.irb.hr/id/eprint/2949
DOI: 10.1063/1.4870242

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