Očko, Miroslav; Žonja, Sanja; Ivanda, Mile (2014) Grain growth from amorphous phase. AIP Advances, 4 . 037125/1-037125/7. ISSN 2158-3226
|
PDF
- Published Version
- article
Available under License Creative Commons Attribution. Download (2MB) | Preview |
Abstract
Time dependence of the grain growth in phosphorus doped silicon thin films deposited in situ at 530 ◦C was investigated. The samples were annealed at 950 ◦C in different time intervals. The theories, which give the tn time dependent increase of grain size, cannot fit the observed data. We derived a differential equation which describes the grain growth from amorphous phase. Our experimental results and the solution of the differential equation show the effect of grain growth stagnation and even grain growth stop. The solution also comprises all the features of the result of the Monte Carlo simulation of the grain growth of purematerials.
| Item Type: | Article | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Uncontrolled Keywords: | grain growth; amorphous phase; Si:P | ||||||||||||||||
| Subjects: | NATURAL SCIENCES > Physics TECHNICAL SCIENCES > Electrical Engineering |
||||||||||||||||
| Divisions: | Division of Materials Physics | ||||||||||||||||
| Projects: |
|
||||||||||||||||
| Depositing User: | Mile Ivanda | ||||||||||||||||
| Date Deposited: | 14 Jul 2016 14:42 | ||||||||||||||||
| URI: | http://fulir.irb.hr/id/eprint/2949 | ||||||||||||||||
| DOI: | 10.1063/1.4870242 |
Actions (login required)
 |
View Item |
Altmetric
Altmetric
