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Irradiation effects on polycrystalline silicon

Borjanović, Vesna; Kovačević, Ivana; Zorc, Hrvoje; Pivac, Branko (2002) Irradiation effects on polycrystalline silicon. Solar Energy Materials and Solar Cells, 72 (1-4). pp. 183-189. ISSN 0927-0248

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Intrinsic point defect population in polycrystalline silicon is of the particular importance due to the influence on the electronic properties of material. A study of intrinsic point defect behavior is additionally complicated due to the interaction with the present impurities and different structural defects. Experiments were performed on EFG polycrystalline silicon material rich with carbon and different structural defects such as dislocations and various grain boundaries. Samples were irradiated with  -rays from a 60Co source to the doses of 300 Mrad to introduce simple point defects into the bulk of the material. The results obtained with DLTS spectroscopy showed that upon formation of the vacancy-interstitial pairs, silicon selfinterstitials get trapped by larger structural defects, creating therefore a vacancy rich bulk of the material.

Item Type: Article
Uncontrolled Keywords: polycrystalline silicon; solar cells; radiation defects
Subjects: NATURAL SCIENCES > Physics
NATURAL SCIENCES > Physics > Condensed Matter Physics
Divisions: Division of Laser and Atomic Research and Development
Division of Materials Physics
Depositing User: Hrvoje Zorc
Date Deposited: 07 May 2015 12:21
DOI: 10.1016/S0927-0248(01)00163-5

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