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GISAXS characterization of Ge islands on Si (100) substrates

Kovačević, Ivana; Dubček, Pavo; Zorc, Hrvoje; Radić, Nikola; Pivac, Branko; Bernstorff, Sigrid (2005) GISAXS characterization of Ge islands on Si (100) substrates. Vacuum, 80 (1-3). pp. 69-73. ISSN 0042-207X

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Abstract

We present a preliminary study of Ge island formation on Si(1 0 0) substrates using grazing-incidence small-angle X-ray scattering (GISAXS). Samples were prepared by high-vacuum evaporation of a 5nm thick Ge layer on Si(1 0 0) substrate held at 200 C. The samples were subsequently annealed at different temperatures for 1 h in vacuum, yielding to island formation. The Fortran program IsGISAXS was used for the simulation and analysis of Ge islands. The verticalcut (perpendicular to the surface) of the experimental 2D GISAXS pattern has been fi tted using a Guinier approximation. The obtained parameters were used for the simulations. The simulated 2D GISAXS pattern well reproduce experimental data for cylindrically shaped islands with morphological parameters R = 4 nm, H=R 0:25 and the average inter-island distance D = 5 nm.

Item Type: Article
Uncontrolled Keywords: GISAXS; nanostructures; silicon; germanium
Subjects: NATURAL SCIENCES > Physics
NATURAL SCIENCES > Physics > Condensed Matter Physics
Divisions: Division of Laser and Atomic Research and Development
Division of Materials Physics
Depositing User: Hrvoje Zorc
Date Deposited: 07 May 2015 10:43
Last Modified: 07 May 2015 10:43
URI: http://fulir.irb.hr/id/eprint/1779
DOI: 10.1016/j.vacuum.2005.07.027

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