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Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

Kovačević, Ivana; Pivac, Branko; Dubček, Pavo; Zorc, Hrvoje; Radić, Nikola; Bernstorff, Sigrid; Campione, Mario; Sassella, Adele (2007) Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing. Applied Surface Science, 253 (6). pp. 3034-3040. ISSN 0169-4332

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Abstract

We have deposited a 12 nm thick Ge layer on Si(1 0 0) held at 200 deg C by thermal evaporation under high vacuum conditions. Upon subsequent thermal annealing in vacuum, self-assembled growth of nanostructural Ge islands on the Ge layer occurred. Atomic force microscopy (AFM) and grazing incidence small-angle X-ray scattering (GISAXS) were used to characterize such layers. GISAXS measurements evidenced the formation of cylinder shaped structures upon annealing at 700 deg C, which was confirmed by AFM measurements with a very sharp tip. A Ge mass transport from the layer to the islands was inferred by X-ray reflectivity and an activation energy of 0.40 +/- 0.10 eV for such a process was calculated.

Item Type: Article
Uncontrolled Keywords: Ge nanostructures; X-ray reflectivity; Ge islands; atomic force microscopy
Subjects: NATURAL SCIENCES > Physics
NATURAL SCIENCES > Physics > Condensed Matter Physics
Divisions: Division of Laser and Atomic Research and Development
Division of Materials Physics
Projects:
Project titleProject leaderProject codeProject type
Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima[67912] Branko Pivac098-0982886-2866MZOS
Novi amorfni i nanostrukturirani tankoslojni materijali[75345] Nikola Radić098-0982886-2895MZOS
Optička svojstva nanostrukturnih slojeva[119546] Hrvoje Zorc098-0000000-3191MZOS
Depositing User: Hrvoje Zorc
Date Deposited: 07 May 2015 10:33
Last Modified: 07 May 2015 10:33
URI: http://fulir.irb.hr/id/eprint/1778
DOI: 10.1016/j.apsusc.2006.06.048

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