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Silicon nanoparticles formation in annealed SiO/SiO2 multilayers

Kovačević, Ivana; Dubček, Pavo; Duguay, S.; Zorc, Hrvoje; Radić, Nikola; Pivac, Branko; Slaoui, A.; Bernstorff, S. (2007) Silicon nanoparticles formation in annealed SiO/SiO2 multilayers. Physica E: Low-dimensional Systems and Nanostructures, 38 (1-2). pp. 50-53. ISSN 1386-9477

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We present a study on amorphous SiO/SiO2 superlattice performed by grazing-incidence small-angle X-ray scattering (GISAXS). Amorphous SiO/SiO2 superlattices were prepared by high-vacuum evaporation of 3 nm thin films of SiO and SiO2 (10 layers each) onto Si(1 0 0) substrate. After the deposition, samples were annealed at 1100 1C for 1 h in vacuum, yielding to Si nanocrystals formation. Using a Guinier approximation, the shape and the size of the crystals were obtained. The size of the growing nanoparticles in the direction perpendicular to the film surface is well controlled by the bilayer thickness. However, their size varies more significantly in the direction parallel to the film surface.

Item Type: Article
Uncontrolled Keywords: Si nanostructures; SiO/SiO2 amorphous superlattice; Small-angle X-ray scattering
Subjects: NATURAL SCIENCES > Physics
NATURAL SCIENCES > Physics > Condensed Matter Physics
Divisions: Division of Laser and Atomic Research and Development
Division of Materials Physics
Project titleProject leaderProject codeProject type
Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima[67912] Branko Pivac098-0982886-2866MZOS
Novi amorfni i nanostrukturirani tankoslojni materijali[75345] Nikola Radić098-0982886-2895MZOS
Optička svojstva nanostrukturnih slojeva[119546] Hrvoje Zorc098-0000000-3191MZOS
Depositing User: Hrvoje Zorc
Date Deposited: 07 May 2015 10:16
DOI: 10.1016/j.physe.2006.12.023

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