Threshold for ionization-induced defect annealing in silicon carbide

Hanžek, Juraj; Fazinić, Stjepko; Kumar Bmatt, Bmatt; Karlušić, Marko (2024) Threshold for ionization-induced defect annealing in silicon carbide. Radiation Physics and Chemistry, 215 . ISSN 0969-806X

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Abstract

Ion track formation in SiC has never been observed, but this material is well-known for easily achieving ionization-induced defect annealing. Therefore, the aim of this work is to study the threshold for ionizationinduced defect annealing in silicon carbide using Rutherford backscattering spectrometry in channeling mode. It was established that 3 MeV O beam can activate the ionization-induced defect annealing in SiC, but 12 MeV O cannot, despite the same electronic stopping values. We attribute this finding to the velocity effect and propose systematic investigations of ionization-induced defect annealing with respect to the velocity of the ion beams used.

Item Type:	Article
Uncontrolled Keywords:	silicon carbide; SiC; ion irradiation; RBS/C; ionization-induced defect annealing
Subjects:	NATURAL SCIENCES > Physics NATURAL SCIENCES > Physics > Condensed Matter Physics
Divisions:	Division of Experimental Physics Division of Materials Physics
Projects:	Project title Project leader Project code Project type Dinamika defekta u nanomaterijalima: istraživanje putem eksperimenata s ionskim tragovima-DyNaMITE++ Marko Karlušić IP-2018-01-2786 HRZZ Potpora vrhunskim istraživanjima Centra izvrsnosti za napredne materijale i senzore- Mile Ivanda; Milko Jakšić; Mario Stipčević; Marko Kralj KK.01.1.1.01.0001 EK
Depositing User:	Marko Karlušić
Date Deposited:	17 Dec 2025 11:08
URI:	http://fulir.irb.hr/id/eprint/10546
DOI:	10.1016/j.radphyschem.2023.111362

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