Atomic Structure and Quasiparticle Interference of Epitaxial Graphene on Ferromagnetic Mn5Ge3

Enenkel, Vivien; Yastrebova, Veronika; Voloshina, Elena; Dedkov, Yuriy; Fonin, Mikhail (2025) Atomic Structure and Quasiparticle Interference of Epitaxial Graphene on Ferromagnetic Mn5Ge3. Advanced Electronic Materials, 11 (18). ISSN 2199-160X

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Abstract

The implementation of graphene in spintronics requires the formation of high quality graphene–ferromagnet interfaces for efficient spin injection. By using low-temperature scanning tunneling microscopy (STM), the atomic structure as well as the electronic properties of epitaxial graphene/ferromagnetic-Mn5Ge3/semiconducting-Ge heterostructures are investigated. The formation of the graphene/Mn5Ge3 interface is performed by Mn evaporation on the graphene/Ge(110) surface combined with annealing during and after deposition, yielding graphene on Mn5Ge3 crystallites of two distinct types, each displaying a principal facet – graphene/Mn5Ge3(0001) and graphene/Mn5Ge3(11-20)). STM imaging shows graphene/Mn5Ge3 interfaces with a high degree of structural order down to the atomic level. The local electronic structure of graphene/Mn5Ge3 probed by dI/dV spectroscopy and by quasiparticle interference mapping is found to be very close to that of free-standing graphene, with only a very small electron doping. These findings provide important microscopic insights into a system with a potential for spintronics device fabrication compatible with modern semiconductor technology.

Item Type:	Article
Uncontrolled Keywords:	graphene; heterostructure; STM; interface
Subjects:	NATURAL SCIENCES > Physics NATURAL SCIENCES > Physics > Condensed Matter Physics
Divisions:	Theoretical Physics Division
Depositing User:	Elena Voloshina
Date Deposited:	10 Nov 2025 13:57
URI:	http://fulir.irb.hr/id/eprint/10171
DOI:	10.1002/aelm.202500376

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