Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS

Knežević, Tihomir; Brodar, Tomislav; Radulović, Vladimir; Snoj, Luka; Makino, Takahiro; Capan, Ivana (2022) Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS. Applied Physics Express, 15 (10). ISSN 1882-0778

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Abstract

We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, E ( c ) -0.4 eV and E ( c )-0.7 eV. They were previously assigned to carbon interstitial (C-i) labeled as EH1/3 and silicon-vacancy (V (Si)) labeled as S-1/2, for the low-energy electron and fast neutron irradiation, respectively. This work demonstrates how Laplace DLTS can be used as a useful tool for distinguishing the EH1 and S-1 defects. We show that EH1 consists of a single emission line arising from the C-i(h), while S-1 has two emission lines arising from the V (Si)(h) and V (Si)(k) lattice sites.

Item Type:	Article
Uncontrolled Keywords:	silicon carbide; defects; irradiation
Subjects:	NATURAL SCIENCES NATURAL SCIENCES > Physics
Divisions:	Division of Materials Physics
Projects:	Project title Project leader Project code Project type Enhancing Security at Borders and Ports-E-Sicure 2 Ivana Capan 5674 NATO
Depositing User:	Virna Brumnić
Date Deposited:	10 Jun 2026 09:47
URI:	https://fulir.irb.hr:/id/eprint/12010
DOI:	10.35848/1882-0786/ac8f83

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