M center in 4 H -SiC is a carbon self-interstitial

Coutinho, J.; Gouveia, J. D.; Makino, T.; Ohshima, T.; Pastuović, Ž.; Bakrač, Luka; Brodar, T.; Capan, Ivana (2021) M center in 4 H -SiC is a carbon self-interstitial. Physical Review B, 103 (18). ISSN 2469-9950

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Abstract

The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels match those of the carbon self-interstitial.

Item Type:	Article
Uncontrolled Keywords:	Defects ; Wide band gap semiconductors ; Deep level transient spectroscopy ;
Subjects:	NATURAL SCIENCES > Physics
Divisions:	Division of Materials Physics
Projects:	Project title Project leader Project code Project type Enhancing Security at Borders and Ports-E-Sicure 2 Ivana Capan 5674 NATO
Depositing User:	Ivana Capan
Date Deposited:	06 May 2026 12:50
URI:	https://fulir.irb.hr:/id/eprint/11913
DOI:	10.1103/PhysRevB.103.L180102

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