Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations

Medina, Elisabetta; Sangregorio, Enrico; Crnjac, Andreo; Romano, Francesco; Milluzzo, Giuliana; Vignati, Anna; Jakšić, Milko; Calcagno, Lucia; Camarda, Massimo (2023) Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations. Micromachines, 14 (1). ISSN 2072-666X

PDF - Published Version - article Available under License Creative Commons Attribution. Download (1MB)

Abstract

Silicon carbide (SiC), thanks to its material properties similar to diamond and its industrial maturity close to silicon, represents an ideal candidate for several harsh-environment sensing applications, where sensors must withstand high particle irradiation and/or high operational temperatures. In this study, to explore the radiation tolerance of SiC sensors to multiple damaging processes, both at room and high temperature, we used the Ion Microprobe Chamber installed at the Ruder Boskovic Institute (Zagreb, Croatia), which made it possible to expose small areas within the same device to different ion beams, thus evaluating and comparing effects within a single device. The sensors tested, developed jointly by STLab and SenSiC, are PIN diodes with ultrathin free-standing membranes, realized by means of a recently developed doping-selective electrochemical etching. In this work, we report on the changes of the charge transport properties, specifically in terms of the charge collection efficiency (CCE), with respect to multiple localized proton irradiations, performed at both room temperature (RT) and 500 degrees C.

Item Type:	Article
Uncontrolled Keywords:	silicon carbide; radiation hardness; proton irradiation; high-temperature irradiation
Subjects:	NATURAL SCIENCES > Physics
Divisions:	Division of Experimental Physics
Depositing User:	Andreo Crnjac
Date Deposited:	22 Apr 2026 13:13
URI:	https://fulir.irb.hr:/id/eprint/11785
DOI:	10.3390/mi14010166

Actions (login required)

View Item