Polychromatic angle resolved IBIC analysis of silicon power diodes

Pezzarossa, M.; Cepparrone, E.; Cosic, Donny; Jakšić, Milko; Provatas, Georgios; Vićentijević, Milan; Vittone, E. (2021) Polychromatic angle resolved IBIC analysis of silicon power diodes. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 488 . pp. 50-63. ISSN 0168583X

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Abstract

This paper describes both an experimental methodology based on the Ion Beam Induced Charge (IBIC) technique and the relevant interpretative model, which were adopted to characterize the electronic features of power diodes. IBIC spectra were acquired using different proton energies (from 1.2 to 2.0 MeV), angles of incidence, and applied bias voltages. The modulation of the ion probe range, combined with the modulation of the extensions of the depletion layer, allowed the charge collection efficiency scale to be accurately calibrated, the dead layer beneath the thick (6 μm) Al electrode and the minority carrier lifetime to be measured. The analysis was performed by using a simplified model extracted from the basic IBIC theory, which proved to be suitable to interpret the behaviour of the IBIC spectra as a function of all the experimental conditions and to characterize the devices, both for what concerns the electrostatics and the recombination processes.

Item Type:	Article
Uncontrolled Keywords:	charge collection efficiency; silicon; power diodes; Ion Beam Induced Charge (IBIC)
Subjects:	NATURAL SCIENCES > Physics > Nuclear Physics
Divisions:	Division of Experimental Physics
Projects:	Project title Project leader Project code Project type Research And Development with Ion Beams – Advancing Technology in Europe-RADIATE Ivančica Bogdanović Radović 824096 EK
Depositing User:	Ema Buhin Šaler
Date Deposited:	22 Apr 2026 11:25
URI:	https://fulir.irb.hr:/id/eprint/11782
DOI:	10.1016/j.nimb.2020.12.006

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