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Capan, Ivana; Brodar, Tomislav; Pastuović, Željko; Siegele, Rainer; Ohshima, Takeshi; Sato, Shin-ichiro; Makino, Takahiro; Snoj, Luka; Radulović, Vladimir; Coutinho, José; Torres, Vitor J. B.; Demmouche, Kamel (2018) Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study. Journal of Applied Physics, 123 (16). p. 161597. ISSN 0021-8979
Pastuović, Željko; Siegele, Rainer; Capan, Ivana; Brodar, Tomislav; Sato, Shin-ichiro; Ohshima, Takeshi (2017) Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime. Journal of Physics: Condensed Matter, 29 (47). p. 475701. ISSN 0953-8984