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M-center in low-energy electron irradiated 4H-SiC

Knežević, T.; Hadžipašić, A.; Ohshima, T.; Makino, T.; Capan, I. (2022) M-center in low-energy electron irradiated 4H-SiC. Applied Physics Letters, 120 (25). ISSN 0003-6951

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We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced the following deep level defects: EH1 and EH3 previously assigned to carbon interstitial-related defects. We propose that EH1 and EH3 are identical to M1 and M3, also recently assigned to carbon interstitial defects, and assign them to C=(h) and C(0)h, respectively.

Item Type: Article
Uncontrolled Keywords: silicon carbide; defects; DLTS
Subjects: NATURAL SCIENCES > Physics > Condensed Matter Physics
Divisions: Division of Materials Physics
Project titleProject leaderProject codeProject type
Enhancing Security at Borders and Ports-E-Sicure 2Ivana Capan5674NATO
Depositing User: Ivana Capan
Date Deposited: 05 Feb 2024 13:54
DOI: 10.1063/5.0095827

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