M-center in low-energy electron irradiated 4H-SiC

Knežević, T.; Hadžipašić, A.; Ohshima, T.; Makino, T.; Capan, I. (2022) M-center in low-energy electron irradiated 4H-SiC. Applied Physics Letters, 120 (25). ISSN 0003-6951

PDF - Published Version - article Available under License Creative Commons Attribution. Download (1MB)

Abstract

We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced the following deep level defects: EH1 and EH3 previously assigned to carbon interstitial-related defects. We propose that EH1 and EH3 are identical to M1 and M3, also recently assigned to carbon interstitial defects, and assign them to C=(h) and C(0)h, respectively.

Item Type:	Article
Uncontrolled Keywords:	silicon carbide; defects; DLTS
Subjects:	NATURAL SCIENCES > Physics > Condensed Matter Physics
Divisions:	Division of Materials Physics
Projects:	Project title Project leader Project code Project type Enhancing Security at Borders and Ports-E-Sicure 2 Ivana Capan 5674 NATO
Depositing User:	Ivana Capan
Date Deposited:	05 Feb 2024 13:54
URI:	http://fulir.irb.hr/id/eprint/8460
DOI:	10.1063/5.0095827

Actions (login required)

View Item