4H-SiC Schottky barrier diodes as radiation detectors: a review

Capan, Ivana (2022) 4H-SiC Schottky barrier diodes as radiation detectors: a review. Electronics, 11 (4). ISSN 2079-9292

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Abstract

In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other semiconductor devices such as PiN diodes or metal-oxide-semiconductor (MOS) structures, as significant progress has been achieved in radiation detection applications of SBDs in the last decade. Here, we present the recent advances at all key stages in the application of 4H-SiC SBDs as radiation detectors, namely: SBDs fabrication, electrical characterization of SBDs, and their radiation response. The main achievements are highlighted, and the main challenges are discussed.

Item Type:	Article
Uncontrolled Keywords:	Schottky barrier diodes ; 4H-SiC ; radiation ; detection
Subjects:	NATURAL SCIENCES > Physics
Divisions:	Division of Materials Physics
Depositing User:	Ivana Capan
Date Deposited:	24 Mar 2022 12:18
URI:	http://fulir.irb.hr/id/eprint/7102
DOI:	10.3390/electronics11040532

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