hrvatski jezikClear Cookie - decide language by browser settings

Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC

Fleissa, Aikaterini; Ntemou, Eleni; Kokkoris, Michael; Liarokapis, Efthymios; Gloginjić, Marko; Petrović, Srdjan; Erih, Marko; Fazinić, Stjepko; Karlušić, Marko; Tomić, Kristina (2019) Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC. Journal of Raman Spectroscopy, 50 (8). pp. 1186-1196. ISSN 0377-0486

[img]
Preview
PDF - Submitted Version - article
Download (1MB) | Preview

Abstract

A 6H‐SiC single crystal implanted in channeling mode by 4‐MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro‐Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create zones of strongly damaged regions, parallel to the front face of the wafer with width increasing with the amount of doping. As expected, Si has induced considerably more lattice distortions than C, and more than one order of magnitude less doping induces apparently the same effect as C. Despite the large laser spot size compared with the boundaries of the distorted regions, micro‐ Raman data provided results agreeing with the SEM pictures and the Monte Carlo calculations using the SRIM‐2013 software. From the evolution of the crystalline peaks in the Raman spectra obtained across the damaged area, one can conclude that the impinging ions do not accommodate as defects in the lattice but mostly displace the ions breaking the bonds and destroying the long range order. The spatial correlation model that takes into consideration the intensity variation at the laser spot and the anticipated from Monte Carlo calculations for the collision events can reproduce the trend of the strong transversal optical phonon width indicating nanocrystallites of a few nanometers size in the most damaged area.

Item Type: Article
Uncontrolled Keywords: channeling ; disorder profile ; ion implantation ; phonon confinement ; silicon carbide
Subjects: NATURAL SCIENCES > Physics
Divisions: Division of Experimental Physics
Division of Materials Physics
Projects:
Project titleProject leaderProject codeProject type
Promjene u kristaliničnim materijalima izazvane ionskim snopovima MeV-skih energija-MIOBICCStjepko FazinićIP-2013-11-8127HRZZ
UNSPECIFIEDUNSPECIFIEDCEMSUNSPECIFIED
UNSPECIFIEDUNSPECIFIEDAIDA-2020UNSPECIFIED
Depositing User: Stjepko Fazinić
Date Deposited: 14 Apr 2020 12:17
Last Modified: 15 Apr 2020 06:29
URI: http://fulir.irb.hr/id/eprint/5424
DOI: 10.1002/jrs.5629

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year

Contrast
Increase Font
Decrease Font
Dyslexic Font
Accessibility